Low-voltage punch-through transient suppressor employing a dual-base structure

ABSTRACT

A punch-through diode transient suppression device has a base region of varying doping concentration to improve leakage and clamping characteristics. The punch-through diode includes a first region comprising an n+ region, a second region comprising a p− region abutting the first region, a third region comprising a p+ region abutting the second region, and a fourth region comprising an n+ region abutting the third region. The peak dopant concentration of the n+ layers should be about 1.5E18 cm −3 , the peak dopant concentration of the p+ layer should be between about 1 to about 5 times the peak concentration of the n+ layer, and the dopant concentration of the p− layer should be between about 0.5E14 cm −3  and about 1.OE17 cm −3 . The junction depth of the fourth (n+) region should be greater than about 0.3 μm. The thickness of the third (p+) region should be between about 0.3 μm and about 2.0 μm, and the thickness of the second (p−) region should be between about 0.5 μm and about 5.0 μm.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation of patent application Ser. No. 08/497,079, filedJun. 30, 1995.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices. Moreparticularly, the present invention relates to a low-voltagepunch-through transient suppressor employing a dual base structure.

2. The Prior Art

Electronic circuitry which is designed to operate at supply voltagesless than 5 volts are extremely susceptible to damage from overvoltageconditions caused by electrostatic discharge, inductively coupledspikes, or other transient conditions from its operating environment.The current trend of the reduction in circuit operating voltage dictatesa corresponding reduction in the maximum voltage that the circuitry canwithstand without incurring damage. As operating voltages drop below 5volts to 3.3 volts and below it becomes necessary to clamp transientvoltage excursions to below five volts.

The most widely used device currently in use for low voltage protectionis the reversed biased p+n+ zener diode. See O. M. Clark, “Transientvoltage suppressor types and application”, IEEE Trans Power Electron.,vol. 5, pp. 20-26, November 1990. These devices perform well at voltagesof 5 volts and above but run into problems when scaled to clamp below 5volts. The two major drawbacks incurred by using this device structureare very large leakage currents and high capacitance. These detrimentalcharacteristics increase power consumption and restrict operatingfrequency.

A second device capable low clamping voltages is the n+pn+ uniform basepunch through diode, such as disclosed in P. J. Kannam, “Design conceptsof high energy punch-through structures” IEEE Trans. Electron Devices,ED-23, no. 8, pp. 879-882, 1976, and D. de Cogan, “The punch throughdiode”, Microelectronics, vol. 8, no. 2, pp. 20-23, 1977. These devicesexhibit much improved leakage and capacitance characteristics over theconventional pn diode but suffer from poor clamping characteristics athigh currents. If the designer tries to improve clamping to protectcircuitry under industry standard surge conditions by increasing diearea, the results are devices which are too large to produceeconomically.

It is therefore an object of the present invention to provide alow-voltage transient suppressor which avoids some of the shortcomingsof the prior art.

It is another object of the present invention to provide a low-voltagetransient suppressor which has a low leakage current.

It is further object of the present invention to provide a low-voltagetransient suppressor which has a lower capacitance than prior-artlow-voltage transient suppressors.

It is yet another object of the present invention to provide alow-voltage transient suppressor which has improved high-currentclamping characteristics compared to prior-art low-voltage transientsuppressors.

BRIEF DESCRIPTION OF THE INVENTION

The transient suppressor device of the present invention comprises an+p−p+n+ punch-through diode. It is a device which can clamp at lowvoltages and have leakage and capacitance characteristics superior tothose of prior-art transient suppressors. The punch-through diode of thepresent invention includes a first region comprising an n+ region, asecond region comprising a p− region abutting the first region, a thirdregion comprising a p+ region abutting the second region, and a fourthregion comprising an n+ region abutting the third region.

The peak dopant concentration of the n+ layers should be about 1.5E18cm⁻³, the peak dopant concentration of the p+ layer should be betweenabout 50 to about 2,000 times the peak concentration of the p− layer,and the dopant concentration of the p− layer should be between about0.5E14 cm⁻³ and about 1.0E17 cm⁻³. The junction depth of the fourth (n+)region should be between about 0.3 um and about 1.5 um. The thickness ofthe third (p+) region should be between about 0.3 um and about 2.0 um,and the thickness of the second (p−) region should be between about 0.5um and about 5.0 um.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing the doping profile of a prior-art pn zenerdiode.

FIG. 2 is a graph showing the doping profile of a prior-art n+pn+punch-through diode.

FIG. 3 is a schematic representation of a cross-sectional view of thepunch-through n+p−p+n+ punch-through diode of the present invention.

FIG. 4 is a graph showing the doping profile of an n+p−p+n+punch-through diode of the present invention such as that of FIG. 3.

FIG. 5 is a graph comparing the current vs voltage characteristicscomparison of the n+p+pn+ diode of the present invention against theprior art.

FIG. 6 is a graph comparing the capacitance vs voltage characteristicsof the n+p+pn+ diode of the present invention against the prior art.

FIG. 7 is a cross-sectional view of a trench/mesa isolated n+p−p+n+transient suppressor diode according to one presently preferredembodiment of the invention.

FIGS. 8a-8g are cross sectional views of the trench/mesa isolatedn+p−p+n+ transient suppressor diode of FIG. 7 taken after completion ofselected steps in an illustrative fabrication process.

FIG. 9 is a cross-sectional view of a diffusion isolated n+p+pn+ diodeaccording to another presently preferred embodiment of the invention.

FIGS. 10a-10h are cross sectional views of the diffusion isolatedn+p−p+n+ transient suppressor diode of FIG. 9 taken after completion ofselected steps in an illustrative fabrication process.

FIG. 11 is a graph of clamping voltage vs. p+ doping density for an+p−p+n+ transient suppressor diode according to the present invention.

FIG. 12 is a graph of standoff voltage vs. p+ doping density for an+p−p+n+ transient suppressor diode according to the present invention.

FIG. 13 is a graph of current vs. voltage for a n+p−p+n+ transientsuppressor diode according to the present invention.

DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT

Those of ordinary skill in the art will realize that the followingdescription of the present invention is illustrative only and not in anyway limiting. Other embodiments of the invention will readily suggestthemselves to such skilled persons.

Reversed biased p+n+ zener diodes are currently the most widely-useddevices for low voltage protection. These devices perform satisfactorilyat voltages of 5 volts and above but exhibit very large leakage currentsand high capacitance, two major drawbacks, when designed to clamp below5 volts. FIG. 1. depicts the impurity doping profile of a typical lowvoltage pn junction device.

The n+p+ uniform base punch-through diode is a second device capable ofclamping low voltages. While the leakage and capacitance characteristicsof the punch-through diode are superior to the conventional pn diode,the punch-through diode has poor clamping characteristics at highcurrents. The doping profile of a low voltage n+pn+ uniform basepunch-through diode is shown in FIG. 2.

Referring now to FIG. 3, a n+p−p+n+ punch-through diode 10 according tothe present invention is shown schematically in cross sectional view.The n+p−p+n+ punch-through diode of the present invention is formed onan n+ region 12 which may comprise a semiconductor substrate. Anepitaxially grown p− region 14 is formed over the upper surface of n+region 12. P+ region 16 is formed by further p-type doping of the uppersurface of the epitaxial layer 14. An n+region 18 is formed over p+region 16 by n-type doping of the upper surface of the epitaxial layer.Electrodes 20 and 22 are in contact with n+ region 12 and n+ region 18,respectively to make electrical contact to the n+p−p+n+ punch-throughdiode device 10. Those of ordinary skill in the art will appreciate thatafter the n-type doping step which creates n+ region 18, only a smallregion 24 of original epitaxial layer 14 remains doped at a p− level.

Table I gives the presently preferred minimum and maximum doping levelsof the regions of the layers 12, 14, 16, and 18. The doping levels forthe n+ layers 12 and 18 and p+ layer 16 are expressed in peak dopantconcentration values (Cn+ and Cp+) and the doping level for the p− layer14 is expressed as an average value (Cp−).

TABLE I Layer Minimum Maximum Cn+ (Peak concentration of 1.5E18 cm⁻³ notcritical n layers) Cp+ (Peak concentration of 5.0E1 × Cp− 1.0E3 × Cp− p+layer) Cp− (concentration of the 0.5E14 cm⁻³ 1.0E17 cm⁻³ p− layer

Table II gives the range of thickness (expressed in um micrometer) forthe junction depth of n+ region 18, p− p+ region 16, and p+ p− region 1824. In Table II, the quantities xj1, xj2, and xj3 refer to linearpositions along the thickness of the epitaxial layer after performanceof the implant doping steps.

TABLE II Layer Minimum Maximum xj1 (n+ junction depth) 0.3 um notcritical xj2 − xj¹ (p+ layer 0.3 um 2.0 um thickness) xj3 − xj2 (p layer0.5 um 5.0 um thickness)

The electrical characteristics of the n+p−p+n+ punch-through diode ofthe present invention are determined by the peak concentrations andwidths of each of the layers depicted in FIG. 3. It is possible to buildsuitable devices using a fairly wide range of junction widths andconcentrations. It is necessary to optimize the structure to fit thefabrication process.

By constructing a punch-through diode according to the present inventionhaving a p− region that has an optimized doping profile, a device can bemanufactured which has superior performance to the prior art. Such anoptimized doping profile for such a structure is depicted in FIG. 4.FIG. 4 illustrates the relative positions of xj1, xj2, and xj3. Personsof ordinary skill in the art will appreciate that the doping profile ofthe device of the present invention is significantly different from thedoping profiles of the prior-art devices depicted in FIGS. 1 and 2.

FIG. 5 shows the current vs voltage characteristics of devices with anactive area of 7.86 mm² constructed using the prior art structures andusing the new n+p−p+n+ punch-through structure of the present invention.The most desirable characteristics are to have low current levels at thespecified operating voltage and a near vertical I/V characteristic athigh currents. FIG. 5 includes two sets of curves for each device type.One is for a devices which have a 2 volt working voltage and one is fordevices having a nominal 4 volt working voltage.

It can be seen from FIG. 5 that at the working voltage of the device thenew n+p−p+n+ structure of the present invention has leakage values whichare four orders of magnitude lower than those achieved with conventionalpn structures and one order of magnitude lower than that of theprior-art punch-through devices. Importantly, this is achieved withoutsacrificing the high-current performance of the device of the presentinvention. The current clamping characteristics of the punch-throughdevice of the present invention match that of the conventional pnstructure up to current densities of over 500 A/cm². It can also be seenthat the leakage levels for zener type devices constructed to protectbelow 4 volts are unacceptably high as indicated by its nearlyhorizontal I/V characteristic.

FIG. 6 shows the capacitance for each of the device structures over theoperating voltage range for each device. It can be seen from anexamination of FIG. 6 that both the prior-art punch-through device andthe new n+p−p+n+ structure of the present invention have capacitancevalues over one order of magnitude lower than that of the pn diode. Thischaracteristic of the device of the present invention will allow fortransient suppression protection of higher frequency lines.

The n+p−p+n+ punch-through transient suppressor diode of the presentinvention can take several forms. Two illustrative forms of the deviceof the present invention are shown in FIGS. 7 and 9. Referring first toFIG. 7, a n+p−p+n+ punch-through transient suppressor diode fabricatedaccording to the principles of the present invention using trenchisolation techniques is shown in cross-sectional view.

The trench/mesa isolation n+p−p+n+ punch-through transient suppressordiode 30 is shown fabricated on n+ substrate 32. N+ substrate 32 isn-type silicon having a maximum 0.01 ohm-cm resistivity. P− layer 34 isdisposed on the upper surface of the n+ substrate 32. P+layer 36 isdisposed on the upper surface of p− layer 34. Finally, n+ layer 38 isdisposed on the upper surface of p+ layer 36. Trenches 40 are disposedat the periphery of layers 34, 36, and 38 and extend down into substrate32. A passivation layer 42 is disposed over the upper surface of n+layer 38 and extends into trenches 40 down to substrate 32 to cover theedges of layers 34, 36, and 38. Metal contact 44 is disposed in anaperture formed in passivation layer 42 and makes electrical contactwith n+ layer 38.

The n+p−p+n+ punch-through diode of the present invention can bemanufactured using standard silicon wafer fabrication techniques. Atypical process flow with ranges that could accommodate most processingequipment for a mesa or trench isolated device such as that depicted inFIG. 7 is shown below with reference to FIGS. 8a-8g. Those of ordinaryskill in the art will readily appreciate that the process flow disclosedherein is in no way meant to be restrictive as there are numerous waysto create the required structures and doping profile for the n+p−p+n+punch-through transient suppressor diode.

Referring first to FIG. 8a, the starting substrate material 32 for then+p−p+n+ punch-through transient suppressor diode depicted in FIG. 7 isn-type Si having a maximum resistivity of 0.01 ohm-cm. A p− typeepitaxial layer 34 having a resistivity in the range of from about 2 toabout 50 ohm-cm is grown to a thickness of between about 2 to about 9 umusing conventional epitaxial growth techniques.

Next, an oxide layer 46 comprising SiO₂ having a thickness from betweenabout 200 angstroms to about 500 angstroms thick is grown using, forexample, standard thermal oxidation techniques. FIG. 8a shows thestructure resulting after the performance of these steps.

Referring now to FIG. 8b, a boron implant is performed to form p+ region36. The level of the boron dopant may be in the range of from about 5E12cm⁻² to 3e15 cm⁻² at an energy of between about 40 KEV and about 200KEV. An anneal and drive-in step is then performed for from about 30minutes to about 2 hours at a temperature in the range of from about900° C. to about 1,100° C. FIG. 8b shows the structure resulting afterthe performance of the boron implant and anneal steps. As can be seenfrom an examination of FIG. 8b, p− region 34 has decreased in thicknessas the heavier p doping from the surface of the epi layer creates p+region 36.

Referring now to FIG. 8c, oxide layer 46 is removed using conventionaloxide etching technology. Another oxide layer 48 is applied using, forexample, standard thermal oxidation techniques, and an n-type implant isperformed through oxide 48 with a dopant species such as phosphorous orarsenic at a dose of between about IE15 cm⁻² to 5E15 cm⁻² at an energyof between about 40 KEV and about 120 KEV to form n+ region 38. Theimplant step is followed by an n+ diffusion step performed for fromabout 15 minutes to about 60 minutes at a temperature in the range offrom about 850° C. to about 1000° C. to drive in the n+ implant. FIG. 8cshows the structure resulting after the performance of the arsenicimplant and drive-in steps but prior to removal of oxide layer 48. Asmay be seen from FIG. 8c, the upper portion of the epi layer has beenconverted to an n+ region by the n-type implant.

Referring now to FIG. 8d, oxide layer 48 is removed using conventionaloxide etching techniques and a trench photomask 50 is applied to theupper surface of n+ region 38 using standard photolithographytechniques. The trenches 40 are then formed using an etching step suchas standard chemical or RIE etching techniques to a depth into thesubstrate sufficient to provide isolation, i.e., 0.5 um. FIG. 8d showsthe structure resulting after the performance of the trench masking andetching steps but prior to removal of trench photomask 50.

Referring now to FIG. 8e, photomask 50 is removed and a passivationlayer 42 comprising a material such as an LPCVD oxide or an equivalentdeposition step at a temperature below 800° C. is formed over the uppersurface of n+ region 38 and into trenches 40. Contact photomask 52having contact aperture 54 is then applied to the surface of passivationlayer 42. A contact opening 56 is next formed in passivation layer 42using a conventional etching step to clear the surface of n+ region 38.FIG. 8e shows the structure resulting after the performance of thecontact masking and etching steps but prior to removal of contactphotomask 52.

Referring now to FIG. 8f, contact photomask 52 is removed and a barriermetal layer 58 is formed over the surface of passivation layer 42 andinto contact opening 54 to make electrical contact with n+ region 38.Barrier layer 58 may comprise a material such as titanium or titaniumtungsten having a thickness in the range of about 500-1,000 angstroms. Ametal layer 60 comprising a material such as aluminum having a thicknessin the range of 20,000 angstroms is formed over barrier layer 58.Together, barrier metal layer 58 and metal layer 60 form metal contact44 of the device of FIG. 7.

Next, a metal mask 62 is formed over the surface of metal layer 60 usingconventional photolithography techniques. The metal layer and barrierlayer are then defined using conventional etching technology. FIG. 8fshows the structure resulting after the formation and definition of thebarrier metal layer and metal layer but prior to removal of metal mask62.

Referring now to FIG. 8g, metal mask 62 is removed and a backgrind stepis performed on the substrate to grind it to about 0.012″ nominalthickness. A backmetalization step is employed to form a metal layer 64for use as a contact on the substrate. Any low ohmic process consistentwith the assembly technique to be employed may be used. FIG. 8g showsthe completed structure resulting after the backgrinding andbackmetalization steps.

An alternative structure also suitable for manufacture of the device ofthe present invention is shown in FIG. 9. This embodiment could bemanufactured by adding an n+ isolation mask and diffusion before theboron implant step and eliminating the trench mask/etch step. In thefollowing drawing figures illustrating this embodiment, where structuresare the same as corresponding structures in the embodiment of FIG. 7,they will be assigned the same reference numerals.

Referring now to FIG. 9, n+p−p+n+ punch-through transient suppressordiode 70 is fabricated on n+ substrate 32. As in the embodiment of FIG.7, n+ substrate 32 is n-type silicon having a maximum 0.01 ohm-cmresistivity. P− layer 34 is disposed in a defined region on the uppersurface of the n+ substrate 32. P+ layer 36 is disposed in a definedregion on the upper surface of p− layer 34. Finally, n+ layer 38 isdisposed in a defined region on the upper surface of p+ layer 36. In theplace of trenches 40, the embodiment of FIG. 9 includes isolationdiffusions 72 disposed at the periphery of region 34 which extend downinto and merge with n+ substrate 32. A passivation layer 42 is disposedover the upper surface of n+ layer 38 and extends over isolationdiffusions 72. Metal contact 44 is disposed in an aperture formed inpassivation layer 42 and makes electrical contact with n+ layer 38.

The embodiment of the device depicted in FIG. 9 may be fabricated usinga process similar to the process described with reference to FIGS.8a-8g. The major difference between the device structure of FIG. 7 andthat of FIG. 9 is that the use of trench isolation allows blanketimplant processing, whereas the device structure of FIG. 9 requiresmasked implants to form the regions 34, 36, and 38.

Referring now to FIGS. 10a-10h, an illustrative fabrication process forthe n+p−p+n+ punch-through transient suppressor diode 70 of FIG. 9 isillustrated. Referring first to FIG. 10a, the starting substratematerial 32 for the n+p−p+ n+ punch-through transient suppressor diodedepicted in FIG. 9 is n-type Si having a maximum resistivity of 0.01ohm-cm. A p-type epitaxial layer 34 having a resistivity in the range offrom about 2 to about 50 ohm-cm is grown to a thickness of between about2 to about 9 μm using conventional epitaxial growth techniques. FIG. 10ashows the structure resulting after the epitaxial growth step. Those ofordinary skill in the art will recognize that, up to this point theprocesses used to make the embodiments of FIGS. 7 and 9 are the same.

Referring now to FIG. 10h, an oxide layer 74 and an isolation implantmask 76 are next applied to the surface of the epitaxial layer 34 and n+isolation implants 78 are formed through apertures 80 and 82 inisolation implant mask 76 using phosphorous to a concentration of about1E15 to about 5E15 at an energy of between about 40 KEV and about 80KEV. The implants are then driven in for between about 30 and about 120minutes at a temperature of between about 1,100° and about 1,200° C.FIG. 10b shows the structure resulting after the formation of isolationimplants 78 but prior to removal of isolation implant mask 76 and oxidelayer 74.

Referring now to FIG. 10c, an oxide layer 46 comprising SiO₂ having athickness from between about 200 angstroms to about 500 angstroms thickis grown using, for example, standard thermal oxidation techniques. A p+implant mask 84 is applied to the surface of oxide layer 46 and a boronimplant is performed through aperture 86 in p+ implant mask 84 to formp+ region 36. As in the embodiment of FIG. 7, the level of the borondopant may be in the range of from about 5E12 cm⁻² to 3e15 cm⁻² at anenergy of between about 40 KEV and about 200 KEV. An anneal and drive-instep is then performed for from about 30 minutes to about 2 hours at atemperature in the range of from about 900° C. to about 1,100° C. FIG.10c shows the structure resulting after the performance of the boronimplant and anneal steps but prior to removal of the p+ implant mask 84and oxide layer 46.

Referring now to FIG. 10d, p+ implant mask 84 and oxide layer 46 areremoved using conventional oxide etching technology. Another oxide layer48 is applied using, for example, standard thermal oxidation techniques,and an n+ implant mask 86 is applied to the surface of oxide layer 48using conventional photolithography techniques. An n-type implant isperformed through and aperture 88 in n+ implant mask 86 and oxide 48with phosphorous as a dopant species at a dose of between about IE15cm⁻² to 5E15 cm⁻² at an energy of between about 40 KEV and about 120 KEVto form n+ region 38. The implant step is followed by an n+ diffusionstep performed for from about 15 minutes to about 60 minutes at atemperature in the range of from about 850° C. to about 1000° C. todrive in the n+ implant. FIG. 10d shows the structure resulting afterthe performance of the phosphorous implant and drive-in steps but priorto removal of n+ implant mask 86 and oxide layer 48.

Referring now to FIG. 10e, photomask 86 and oxide layer 48 are removedand a passivation layer 42 comprising a material such as an LPCVD oxideor an equivalent deposition step at a temperature below 800° C. isformed over the upper surface of n+ region 38. Passivation mask 88 isthen applied to the surface of the passivation layer 42 to define it anda conventional oxide etching step is employed to define the passivationlayer. FIG. 10e shows the structure resulting after the performancepassivation layer definition etch but prior to removal of passivationmask 88.

Referring now to FIG. 10f, passivation mask 88 is removed and contactphotomask 52 having contact aperture 54 is then applied to the surfaceof passivation layer 42. A contact opening 56 is next formed inpassivation layer 42 using a conventional etching step to clear thesurface of n+ region 38. FIG. 10f shows the structure resulting afterthe performance of the contact masking and etching steps but prior toremoval of contact photomask 52. Those of ordinary skill in the art willrecognize that passivation mask 88 and contact mask 56 could be the samemask and these steps would then be consolidated.

Referring now to FIG. 10g, contact photomask 52 is removed and a barriermetal layer 58 is formed over the surface of passivation layer 42 andinto contact opening 54 to make electrical contact with n+ region 38.Barrier layer 58 may comprise a material such as titanium or titaniumtungsten having a thickness in the range of about 500 to about 1,000angstroms A metal layer 60 comprising a material such as aluminum havinga thickness in the range of 20,000 angstroms is formed over barrierlayer 58. Together, barrier metal layer 58 and metal layer 60 form metalcontact 44 of the device of FIG. 7.

Next, a metal mask 62 is formed over the surface of metal layer 60 usingconventional photolithography techniques. The metal layer and barrierlayer are then defined using conventional etching technology. FIG. 10gshows the structure resulting after the formation and definition of thebarrier metal layer and metal layer but prior to remove of metal mask62.

Referring now to FIG. 10h, metal mask 62 is removed and a backgrind stepis performed on the substrate to grind it to about 0.012″ nominalthickness. A backmetalization step is employed to form a metal layer 64for use as a contact on the backside of the substrate. Any low ohmicprocess consistent with the assembly technique to be employed may beused. FIG. 10h shows the completed structure resulting after thebackgrinding and backmetalization steps.

The following data in Table Ill is an example of the processingparameters used to fabricate an actual n+p−p+n+ punch-through diodetransient suppressor device according to the present invention, and theresulting physical parameters (Table IV) and electrical parameters(Table V) exhibited by the device.

TABLE III Process parameters Boron implant (p+) 1.5E18 cm⁻² 90 keV Borondrive 70 min. 1040° C. Phos Implant 1E 15 80 keV n+ drive 15 min 900° C.

TABLE IV Physical Measurements xj1 0.6 um xj2 1.2 um xj3 1.9 um Cn+2.0E19 cm⁻³ Cp+ 1.0E17 cm⁻³ Cp 1.8E15 cm⁻³

TABLE V Electrical Characteristics BV at 0.1 A/cm² 3.9 V to 4.0 V Ir at80% of BV (standoff voltage) 3E-3 A/cm² Vclamp at 1,500 A/cm² 4.3 VCapacitance at 0 V 400-450 pF

The characteristics shown in Tables III, IV, and V may be extrapolatedto other processing conditions. FIGS. 11, 12, and 13 are graphs whichillustrate the variations of device characteristics as a function ofprocessing parameters. The data in these charts have not been fullyverified by experiment. Verification tests are still being run as of thefiling date of this application.

FIG. 11 is a set of curves of device clamping voltage vs. p+ dopingdensity for a n+p−p+n+ transient suppressor diode according to thepresent invention. The four curves represent boron doping densities ofthe p+ region of 1E14, 5E14, 1E15, and 1.5E15, expressed in cm⁻³ units.

FIG. 12 is a set of curves of standoff voltage vs. p+ doping density fora n+p−p+n+ transient suppressor diode according to the presentinvention. Standoff voltage is equal to 80% of BV. The four curvesrepresent boron doping densities of the p+ region of 1E14, 5E14, 1E15,and 1.5E15, expressed in cm⁻³ units.

FIG. 13 is a graph of current vs. voltage and illustrates the advantagesof the n+p−p+n+ transient suppressor diode of the present invention.FIG. 13 shows the effects of the differential in doping of the p− and p+regions according to the present invention. The three curves representp+ boron doping densities of the p+ region of 1E16, 5E17, and 2E17expressed in cm⁻³ units. In each case, the p− boron doping density ofthe p− regions is 1E15. The curve representing a p+ doping density of1E16, only 10 times that of the p− region shows behavior approachingthat of prior-art punch-through devices. From FIG. 13, it is clear thata ratio of 100 gives the optimum characteristic and that varying thisratio can have dramatic effects on the clamping characteristics. Atpresent, it is thought that the ratio plays an important role inachieving the desired characteristics, but the desired results may bedue in part to other restrictions, such as layer thicknesses.

While embodiments and applications of this invention have been shown anddescribed, it would be apparent to those skilled in the art that manymore modifications than mentioned above are possible without departingfrom the inventive concepts herein. The invention, therefore, is not tobe restricted except in the spirit of the appended claims.

What is claimed is:
 1. A punch-through diode transient suppressiondevice comprising: a first region comprising an n+ region; a secondregion comprising a p− region abutting said first region; a third regioncomprising a p+ region abutting said second region; a fourth regioncomprising an n+ region abutting said third region; a passivation layerdisposed over an upper surface of said fourth region; and an isolationtrench disposed at outer edges of said p− region, said p+ region, andsaid fourth n+ region, said isolation trench extending into said firstn+ region.
 2. The punch-through diode transient suppression device ofclaim 1 wherein: said first and fourth regions have a peak dopantconcentration of about 1.5E18 cm⁻³; said third region has a peak dopantconcentration of between about 50 to about 2,000 times said peak dopantconcentration of said second region; and said second region has a dopantconcentration of between about 0.5E14 cm⁻³ and about 1.0E17 cm⁻³.
 3. Thepunch-through diode transient suppression device of claim 2 wherein:said fourth region has a junction depth of greater than about 0.3 um;said third region has a thickness of between about 0.3 um and about 2.0um, and said second region has a thickness of between about 0.5 um andabout 5.0 um.
 4. A punch-through diode transient suppression devicecomprising: a n+ substrate having an upper surface; a p− region disposedon said upper surface of said n+ substrate, said p− region having anupper surface, a side surface, and a first end; and a p+ region disposedon said upper surface of said p− region, said p+ region having an uppersurface and a first end; an n+ region disposed on an upper surface ofsaid p+ region, said n+ region having an upper surface; an isolationdiffusion region disposed on said side of said p− region, said isolationdiffusion region having an upper surface; and a passivation layerdisposed over said upper surface of said n+ region, at said uppersurface of said isolation diffusion region, at said first end of said p−region, and at said first end of said p+ region.
 5. The punch-throughdiode transient suppression device of claim 4 wherein: said substrateand said n+ region have a peak dopant concentration of about 1.5E18cm⁻³; said p+ region has a peak dopant concentration of between about 50to about 2,000 times said dopant concentration of said p− region; andsaid p− region has a dopant concentration of between about 0.5E14 cm⁻³and about 1.0E17 cm⁻³.
 6. The punch-through diode transient suppressiondevice of claim 5 wherein: said n+ region has a junction depth ofgreater than about 0.3 um; said p+ region has a thickness of betweenabout 0.3 um and about 2.0 um, and said p− region has a thickness ofbetween about 0.5 um and about 5.0 um.
 7. The punch-through diode inclaim 1, wherein said passivation layer is disposed over said uppersurface at outer edges of said p− region and said p+ region; saidpassivation layer including a contact aperture therethrough to an uppersurface of said n+ region.
 8. The punch-through diode transientsuppression device of claim 1 wherein: said first and fourth regionshave a peak dopant concentration of about 1.5E18 cm⁻³; said third regionhas a peak dopant concentration of between about 50 to about 2,000 timessaid peak dopant concentration of said second region; and said secondregion has a dopant concentration of between about 0.5E14 cm⁻³ and about1.0E17 cm⁻³.
 9. The punch-through diode transient suppression device ofclaim 8 wherein: said fourth region has a junction depth of greater thanabout 0.3 μm; said third region has a thickness of between about 0.3 μmand about 2.0 μm, and said second region has a thickness of betweenabout 0.5 μm and about 5.0 μm.
 10. The punch-through diode in claim 7,further including an isolation region disposed at outer edges of saidp−region, said p+ region, and said n+ region, said isolation regionextending into said n+ region.
 11. The punch-through diode in claim 4,wherein said passivation layer includes a contact aperture therethroughto said upper surface of said n+ region.
 12. A punch-through diodetransient suppression device comprising: a first region comprising afirst dopant type and a first dopant concentration value; a secondregion comprising a second dopant concentration value that differs fromsaid first dopant concentrative value, said second region abutting saidfirst region; a third region comprising a third dopant type that differsfrom said first dopant type, said third region abutting said secondregion; a fourth region comprising said first dopant type, said fourthregion abutting said third region; a passivation layer disposed over anupper surface of said fourth region, said passivation layer having anaperture allowing a metal contact to provide an electrical connectionwith said fourth region; an isolation trench disposed at outer edges ofsaid second region, said third region, and said fourth region, saidisolation trench extending into said first region.
 13. The punch-throughdiode transient suppression device of claim 12 , wherein said first andfourth regions each comprises an n dopant type.
 14. The punch-throughdiode transient suppression device of claim 13 , wherein said first andfourth regions each comprises an n+ dopant type.
 15. The punch-throughdiode transient suppression device of claim 12 , wherein said thirdregion comprises a p dopant type.
 16. The punch-through diode transientsuppression device of claim 15 , wherein said third region comprises ap+ dopant type.
 17. The punch-through diode transient suppression deviceof claim 12 , further comprising a first metal contact disposed in saidaperture, said first metal contact making an electrical connection withsaid fourth region.
 18. The punch-through diode transient suppressiondevice of claim 17 , further comprising a second metal contact making anelectrical connection with said first region.
 19. The punch-throughdiode transient suppression device of claim 12 , wherein: said fourthregion has a junction depth of greater than about 0.3 μm; said thirdregion has a thickness of between about 0.3 μm and 2.0 μm; and saidsecond region has a thickness of between about 0.5 μm and about 5.0 μm.20. The punch-through diode transient suppression device of claim 12 ,wherein said second region reduces a capacitance of the suppressiondevice.
 21. The punch-through diode transient suppression device ofclaim 12 , wherein said passivation layer is further disposed on a firstend of said second region and a first end of said third region.
 22. Apunch-through diode transient suppression device comprising: an n+dopant type substrate having an n+ dopant concentration value; a firstregion for reducing a capacitive level of the suppression device, saidfirst region abutting said n+ dopant type substrate and comprising afirst dopant concentration value that differs from said n+ dopantconcentration value; a second region abutting said first region, saidsecond region comprising a second dopant type that differs from said n+dopant type; an n+ dopant type region abutting said second region; apassivation layer disposed over an upper surface of said n+ dopant typeregion, said passivation layer having an aperture allowing a metalcontact to provide an electrical connection with said n+ dopant typeregion; and an isolation region disposed at outer edges of said firstregion, said second region, and said fourth region, said isolationregion extending into said n+ dopant type substrate.
 23. Thepunch-through diode transient suppression device of claim 22 , whereinsaid second region comprises a p dopant type.
 24. The punch-throughdiode transient suppression device of claim 23 , wherein said secondregion comprises a p+ dopant type.
 25. The punch-through diode transientsuppression device of claim 22 , further comprising a first metalcontact disposed in said aperture, said first metal contact making anelectrical connection with said n+ dopant type region.
 26. Thepunch-through diode transient suppression device of claim 25 , furthercomprising a second metal contact making an electrical connection withsaid first n+ dopant type substrate.
 27. The punch-through diodetransient suppression device of claim 22 , wherein: said n+ dopant typeregion has a junction depth of greater than about 0.3 μm; said secondregion has a thickness of between about 0.3 μm and about 2.0 μm; andsaid first region has a thickness of between about 0.5 μm and about 5.0μm.
 28. The punch-through diode transient suppression device of claim 22, wherein said passivation layer is further disposed on a first end ofsaid first region and a first end of said second region.